254-GHz-to-299-GHz Down Conversion Mixer Using 45nm SOI CMOS
Y Sako, T Kobayashi, S Hara… - 2022 IEEE 65th …, 2022 - ieeexplore.ieee.org
2022 IEEE 65th International Midwest Symposium on Circuits and …, 2022•ieeexplore.ieee.org
We have realized a CMOS down-conversion mixer with a bandwidth of 254 GHz to 299 GHz
using a 45 nm SOI CMOS process. We measured the prototype chip and obtained a
conversion gain of− 16.5 dB and SSBNF of 26.5 dB at a power consumption of 81.1 mW. If a
local oscillator is built in, simulation results show that the conversion gain and SSB NF could
be improved to− 4.16 dB and 15.3 dB, respectively
using a 45 nm SOI CMOS process. We measured the prototype chip and obtained a
conversion gain of− 16.5 dB and SSBNF of 26.5 dB at a power consumption of 81.1 mW. If a
local oscillator is built in, simulation results show that the conversion gain and SSB NF could
be improved to− 4.16 dB and 15.3 dB, respectively
We have realized a CMOS down-conversion mixer with a bandwidth of 254 GHz to 299 GHz using a 45 nm SOI CMOS process. We measured the prototype chip and obtained a conversion gain of −16.5 dB and SSBNF of 26.5 dB at a power consumption of 81.1 mW. If a local oscillator is built in, simulation results show that the conversion gain and SSB NF could be improved to −4.16 dB and 15.3 dB, respectively
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