Characterization of channel temperature in Ga2O3 metal-oxide-semiconductor field-effect transistors by electrical measurements and thermal modeling
MH Wong, Y Morikawa, K Sasaki, A Kuramata… - Applied Physics …, 2016 - pubs.aip.org
The channel temperature (T ch) and thermal resistance (R th) of Ga 2 O 3 metal-oxide-
semiconductor field-effect transistors were investigated through electrical measurements
complemented by electrothermal device simulations that incorporated experimental Ga 2 O
3 thermal parameters. The analysis technique was based on a comparison between DC and
pulsed drain currents (I DS) at known applied biases, where negligible self-heating under
pulsed conditions enabled approximation of T ch to the ambient temperature (T amb) and …
semiconductor field-effect transistors were investigated through electrical measurements
complemented by electrothermal device simulations that incorporated experimental Ga 2 O
3 thermal parameters. The analysis technique was based on a comparison between DC and
pulsed drain currents (I DS) at known applied biases, where negligible self-heating under
pulsed conditions enabled approximation of T ch to the ambient temperature (T amb) and …
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