Cryogenic ultra-low power dissipation operational amplifiers with GaAs JFETs
Y Hibi, H Matsuo, H Ikeda, M Fujiwara, L Kang, J Chen… - Cryogenics, 2016 - Elsevier
To realize a multipixel camera for astronomical observation, we developed cryogenic multi-
channel readout systems using gallium arsenide junction field-effect transistor (GaAs JFET)
integrated circuits (ICs). Based on our experience with these cryogenic ICs, we designed,
manufactured, and demonstrated operational amplifiers requiring four power supplies and
two voltage sources. The amplifiers operate at 4.2 K with an open-loop gain of 2000. The
gain–bandwidth product can expect 400 kHz at a power dissipation of 6 μW. In performance …
channel readout systems using gallium arsenide junction field-effect transistor (GaAs JFET)
integrated circuits (ICs). Based on our experience with these cryogenic ICs, we designed,
manufactured, and demonstrated operational amplifiers requiring four power supplies and
two voltage sources. The amplifiers operate at 4.2 K with an open-loop gain of 2000. The
gain–bandwidth product can expect 400 kHz at a power dissipation of 6 μW. In performance …
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