Epitaxial Growth of InGaSb Layers on GaAs Substrates for Fabrication of InGaSb-based THz-QCLs
H Yasuda - 2018 43rd International Conference on Infrared …, 2018 - ieeexplore.ieee.org
H Yasuda
2018 43rd International Conference on Infrared, Millimeter, and …, 2018•ieeexplore.ieee.orgWe propose InGaSb-well-based THz-QCLs for higher temperature operation. For the
preparation of the MBE growth of the InGaSb-well-based QCLs, we optimize growth
conditions of InGaSb layers on a GaAs substrate with introducing an In x Gar 1-x Sb graded
buffer layer.
preparation of the MBE growth of the InGaSb-well-based QCLs, we optimize growth
conditions of InGaSb layers on a GaAs substrate with introducing an In x Gar 1-x Sb graded
buffer layer.
We propose InGaSb-well-based THz-QCLs for higher temperature operation. For the preparation of the MBE growth of the InGaSb-well-based QCLs, we optimize growth conditions of InGaSb layers on a GaAs substrate with introducing an In x Gar 1-x Sb graded buffer layer.
ieeexplore.ieee.org
Showing the best result for this search. See all results