Extreme thermal stability of 1550 nm band highly stacked QD-LDs with p-doped structure
A Matsumoto, K Akahane, T Umezawa… - Conference on Lasers …, 2017 - opg.optica.org
A Matsumoto, K Akahane, T Umezawa, N Yamamoto
Conference on Lasers and Electro-Optics/Pacific Rim, 2017•opg.optica.orgWe fabricated 1550 nm band, p-doped, ridge-structured, 30-layer-stacked QD-LDs with a
delta-doping method employing the strain compensation technique grown on an InP (311) B
substrate. And, we demonstrated the fabricated ridge-structured QD-LD had extremely
stable temperature characteristics, where a T0 of more than 1900 K was obtained.
delta-doping method employing the strain compensation technique grown on an InP (311) B
substrate. And, we demonstrated the fabricated ridge-structured QD-LD had extremely
stable temperature characteristics, where a T0 of more than 1900 K was obtained.
Abstract
We fabricated 1550 nm band, p-doped, ridge-structured, 30-layer-stacked QD-LDs with a delta-doping method employing the strain compensation technique grown on an InP (311) B substrate. And, we demonstrated the fabricated ridge-structured QD-LD had extremely stable temperature characteristics, where a T0 of more than 1900 K was obtained.
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