Fabrication and Temperature Characteristics of 1550nm InAs/InGaAlAs Quantum Dot Distributed Feedback Lasers with Side Grating
R Kaneko, R Katsuhara, R Yabuki… - 2022 Compound …, 2022 - ieeexplore.ieee.org
R Kaneko, R Katsuhara, R Yabuki, A Matsumoto, K Akahane, Y Matsushima, H Ishikawa…
2022 Compound Semiconductor Week (CSW), 2022•ieeexplore.ieee.orgDistributed feedback (DFB) lasers with side gratings were fabricated by a novel method of
two step etching using 1550nm InAs/InGaAlAs quantum dot (QD) wafers grown on InP (311)
B substrates with strain compensation technique, and room temperature continuous wave
(CW) single-mode operation with a side mode suppression ratio (SMSR) of 39 dB was
achieved by AR/HR facet coating. The threshold current density was 2.33 kA/cm 2, and high
temperature operation up to 80° C was also achieved without heat dissipation treatment …
two step etching using 1550nm InAs/InGaAlAs quantum dot (QD) wafers grown on InP (311)
B substrates with strain compensation technique, and room temperature continuous wave
(CW) single-mode operation with a side mode suppression ratio (SMSR) of 39 dB was
achieved by AR/HR facet coating. The threshold current density was 2.33 kA/cm 2, and high
temperature operation up to 80° C was also achieved without heat dissipation treatment …
Distributed feedback (DFB) lasers with side gratings were fabricated by a novel method of two step etching using 1550nm InAs/InGaAlAs quantum dot (QD) wafers grown on InP(311)B substrates with strain compensation technique, and room temperature continuous wave (CW) single-mode operation with a side mode suppression ratio (SMSR) of 39 dB was achieved by AR/HR facet coating. The threshold current density was 2.33 kA/cm 2 , and high temperature operation up to 80 °C was also achieved without heat dissipation treatment. The characteristic temperature coefficient was 113 K, and the wavelength shift was 0.05 nm/K.
ieeexplore.ieee.org
Showing the best result for this search. See all results