First Demonstration of Ga2O3 Trench MOS-Type Schottky Barrier Diodes
K Sasaki, D Wakimoto, QT Thieu… - IEEE Electron …, 2017 - ieeexplore.ieee.org
K Sasaki, D Wakimoto, QT Thieu, Y Koishikawa, A Kuramata, M Higashiwaki, S Yamakoshi
IEEE Electron Device Letters, 2017•ieeexplore.ieee.orgWe developed β-Ga 2 O 3 trench MOS-type Schottky barrier diodes (MOSSBDs) for the first
time. A Sidoped Ga 2 O 3 layer was grown via halide vapor phase epitaxy on a single-crystal
Sn-doped β-Ga 2 O 3 (001) substrate. The trench structure was fabricated using dry etching
and photolithography. HfO 2 film was used as the dielectric film of the trench MOS structure.
The specific on-resistances (RON, SP) of the normal SBD and trench MOSSBD were about
2.3 and 2.9 mΩcm 2, respectively. The reason the RON, SP of MOSSBD was a little higher …
time. A Sidoped Ga 2 O 3 layer was grown via halide vapor phase epitaxy on a single-crystal
Sn-doped β-Ga 2 O 3 (001) substrate. The trench structure was fabricated using dry etching
and photolithography. HfO 2 film was used as the dielectric film of the trench MOS structure.
The specific on-resistances (RON, SP) of the normal SBD and trench MOSSBD were about
2.3 and 2.9 mΩcm 2, respectively. The reason the RON, SP of MOSSBD was a little higher …
We developed β-Ga 2 O 3 trench MOS-type Schottky barrier diodes (MOSSBDs) for the first time. A Sidoped Ga 2 O 3 layer was grown via halide vapor phase epitaxy on a single-crystal Sn-doped β-Ga 2 O 3 (001) substrate. The trench structure was fabricated using dry etching and photolithography. HfO 2 film was used as the dielectric film of the trench MOS structure. The specific on-resistances (RON,SP) of the normal SBD and trench MOSSBD were about 2.3 and 2.9 mΩcm 2 , respectively. The reason the RON,SP of MOSSBD was a little higher than that of the Schottky barrier diodes (SBD) is that the current path decrease as a result of forming the trench MOS structure. The normal SBD had a large reverse leakage current due to the large electric field at the anode metal/semiconductorinterface. On the other hand, the trench MOSSBD had several orders of magnitude smaller leakage current. We, thus, demonstrated that incorporating the trench MOS structure in Ga 2 O 3 is highly effective for decreasing the reverse leakage current.
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