Gallium oxide field effect transistors—Establishing new frontiers of power switching and radiation-hard electronics

MH Wong, M Higashiwaki - … Journal of High Speed Electronics and …, 2019 - World Scientific
International Journal of High Speed Electronics and Systems, 2019World Scientific
Ga2O3 has gained worldwide interests for next-generation power electronics because its
large critical field strength stemming from an ultra-wide bandgap promises miniaturized
circuits and systems with high conversion efficiency. Intense pursuit of Ga2O3 power
devices stimulated by early demonstrations of high-voltage Ga2O3 field effect transistors
(FETs) has brought about tremendous advancements in this new technology, whose strong
radiation tolerance and high thermal stability also befit harsh-environment applications. In …
Ga2O3 has gained worldwide interests for next-generation power electronics because its large critical field strength stemming from an ultra-wide bandgap promises miniaturized circuits and systems with high conversion efficiency. Intense pursuit of Ga2O3 power devices stimulated by early demonstrations of high-voltage Ga2O3 field effect transistors (FETs) has brought about tremendous advancements in this new technology, whose strong radiation tolerance and high thermal stability also befit harsh-environment applications. In this paper, we review the various types of depletionand enhancement-mode Ga2O3 FETs — which have predominantly been lateral devices — for power switching and radiation-hard electronics. The development of vertical Ga2O3 transistors based on a low-cost, highly-manufacturable ion implantation doping process will also be discussed.
World Scientific
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