Light extraction enhancement of 265 nm deep-ultraviolet light-emitting diodes with over 90 mW output power via an AlN hybrid nanostructure
S Inoue, T Naoki, T Kinoshita, T Obata… - Applied Physics …, 2015 - pubs.aip.org
Deep-ultraviolet (DUV) aluminum gallium nitride-based light-emitting diodes (LEDs) on
transparent aluminum nitride (AlN) substrates with high light extraction efficiency and high
power are proposed and demonstrated. The AlN bottom side surface configuration, which is
composed of a hybrid structure of photonic crystals and subwavelength nanostructures, has
been designed using finite-difference time-domain calculations to enhance light extraction.
We have experimentally demonstrated an output power improvement of up to 196% as a …
transparent aluminum nitride (AlN) substrates with high light extraction efficiency and high
power are proposed and demonstrated. The AlN bottom side surface configuration, which is
composed of a hybrid structure of photonic crystals and subwavelength nanostructures, has
been designed using finite-difference time-domain calculations to enhance light extraction.
We have experimentally demonstrated an output power improvement of up to 196% as a …
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