Molecular beam epitaxy of strained-layer InAs/GaInSb superlattices for long-wavelength photodetectors
M Patrashin, K Akahane, N Sekine, I Hosako - Journal of Crystal Growth, 2017 - Elsevier
We report on the growth and characterization of strained-layer InAs/Ga 1− x In x Sb
superlattices for long-wavelength photodetectors. The thickness and alloy composition x<
0.4 of the layers were designed to produce narrow superlattice energy gaps of< 50 meV for
optical absorption in the terahertz spectral range. The structures were grown on GaSb (1 0
0) substrates by solid-source molecular beam epitaxy. The structure and surface quality
were analyzed by using X-ray diffraction, scanning transmission electron microscopy …
superlattices for long-wavelength photodetectors. The thickness and alloy composition x<
0.4 of the layers were designed to produce narrow superlattice energy gaps of< 50 meV for
optical absorption in the terahertz spectral range. The structures were grown on GaSb (1 0
0) substrates by solid-source molecular beam epitaxy. The structure and surface quality
were analyzed by using X-ray diffraction, scanning transmission electron microscopy …
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