Small valence band offset of h-BN/Al0. 7Ga0. 3N heterojunction measured by X-ray photoelectron spectroscopy
GD Hao, S Tsuzuki, S Inoue - Applied Physics Letters, 2019 - pubs.aip.org
Because of its large bandgap of∼ 6.0 eV and suitability for high p-type doping, hexagonal
boron nitride (h-BN) has become a candidate material that can serve as a p-layer by forming
a heterostructure with AlGaN materials with a high Al fraction in deep-ultraviolet
optoelectronic devices. The band offsets at the heterojunction are crucial to the device
design because they determine the hole and electron transport properties across the
heterojunction. In this study, we give the band alignment between h-BN and Al 0.7 Ga 0.3 N …
boron nitride (h-BN) has become a candidate material that can serve as a p-layer by forming
a heterostructure with AlGaN materials with a high Al fraction in deep-ultraviolet
optoelectronic devices. The band offsets at the heterojunction are crucial to the device
design because they determine the hole and electron transport properties across the
heterojunction. In this study, we give the band alignment between h-BN and Al 0.7 Ga 0.3 N …
[CITATION][C] Small valence band offset of h-BN/Al0. 7Ga0. 3N heterojunction measured
GD Hao, S Tsuzuki, S Inoue
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