Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n––Ga2O3 drift layers …
M Higashiwaki, K Konishi, K Sasaki, K Goto… - Applied Physics …, 2016 - pubs.aip.org
We investigated the temperature-dependent electrical properties of Pt/Ga 2 O 3 Schottky
barrier diodes (SBDs) fabricated on n–-Ga 2 O 3 drift layers grown on single-crystal n+-Ga 2
O 3 (001) substrates by halide vapor phase epitaxy. In an operating temperature range from
21 C to 200 C, the Pt/Ga 2 O 3 (001) Schottky contact exhibited a zero-bias barrier height of
1.09–1.15 eV with a constant near-unity ideality factor. The current–voltage characteristics of
the SBDs were well-modeled by thermionic emission in the forward regime and thermionic …
barrier diodes (SBDs) fabricated on n–-Ga 2 O 3 drift layers grown on single-crystal n+-Ga 2
O 3 (001) substrates by halide vapor phase epitaxy. In an operating temperature range from
21 C to 200 C, the Pt/Ga 2 O 3 (001) Schottky contact exhibited a zero-bias barrier height of
1.09–1.15 eV with a constant near-unity ideality factor. The current–voltage characteristics of
the SBDs were well-modeled by thermionic emission in the forward regime and thermionic …
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