[HTML][HTML] 150 mW deep-ultraviolet light-emitting diodes with large-area AlN nanophotonic light-extraction structure emitting at 265 nm
S Inoue, N Tamari, M Taniguchi - Applied Physics Letters, 2017 - pubs.aip.org
High-power 265 nm deep-ultraviolet (DUV) AlGaN-based light-emitting diodes (LEDs) with
large-area AlN nanophotonic light-extraction structures that were fabricated by a
nanoimprint lithography process are presented. Each DUV-LED has a large active area
(mesa size of∼ 0.35 mm 2) and a uniform current spreading design that allows high
injection current operation. We have shown that these DUV-LEDs with their large-area
nanoimprinted AlN nanophotonic structures exhibit wider near-field emitting areas, stronger …
large-area AlN nanophotonic light-extraction structures that were fabricated by a
nanoimprint lithography process are presented. Each DUV-LED has a large active area
(mesa size of∼ 0.35 mm 2) and a uniform current spreading design that allows high
injection current operation. We have shown that these DUV-LEDs with their large-area
nanoimprinted AlN nanophotonic structures exhibit wider near-field emitting areas, stronger …
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