[HTML][HTML] A trapping tolerant drain current based temperature measurement of β-Ga2O3 MOSFETs
The drain current temperature dependence is an efficient way to determine the channel
temperature in semiconductor devices; however, it has been challenging to use due to the
potential interference of trapping effects. A trapping tolerant method is proposed, illustrated
here for Ga 2 O 3 MOSFETs, making in situ temperature measurements possible, allowing a
thermal resistance of 59 K· mm/W to be measured in Ga 2 O 3 MOSFETs. However,
neglecting the effect of trapping causes an error of∼ 15% in the channel temperature …
temperature in semiconductor devices; however, it has been challenging to use due to the
potential interference of trapping effects. A trapping tolerant method is proposed, illustrated
here for Ga 2 O 3 MOSFETs, making in situ temperature measurements possible, allowing a
thermal resistance of 59 K· mm/W to be measured in Ga 2 O 3 MOSFETs. However,
neglecting the effect of trapping causes an error of∼ 15% in the channel temperature …
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