Advantage of heteroepitaxial GaSb thin-film buffer and GaSb dot nucleation layer for GaSb/AlGaSb multiple quantum well structure grown on Si (1 0 0) substrate by …
R Machida, K Akahane, I Watanabe, S Hara… - Journal of Crystal …, 2019 - Elsevier
Abstract We grew a GaSb/Al 0.3 Ga 0.7 Sb multiple-quantum-well (MQW) structure on a two-
inch Si (1 0 0) substrate using a 100-nm-thick heteroepitaxial GaSb thin-film buffer with a
nucleation layer of GaSb dots by molecular beam epitaxy (MBE) and evaluated the surface
morphology and the photoluminescence (PL) and X-ray diffraction spectra of the MQW
structure. The full width at half maximum of the PL spectrum of the GaSb/Al 0.3 Ga 0.7 Sb
MQW structure was very narrow, although the buffer thickness was much lower than those …
inch Si (1 0 0) substrate using a 100-nm-thick heteroepitaxial GaSb thin-film buffer with a
nucleation layer of GaSb dots by molecular beam epitaxy (MBE) and evaluated the surface
morphology and the photoluminescence (PL) and X-ray diffraction spectra of the MQW
structure. The full width at half maximum of the PL spectrum of the GaSb/Al 0.3 Ga 0.7 Sb
MQW structure was very narrow, although the buffer thickness was much lower than those …
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