Effect of substrate orientation on homoepitaxial growth of β-Ga2O3 by halide vapor phase epitaxy
K Goto, H Murakami, A Kuramata, S Yamakoshi… - Applied Physics …, 2022 - pubs.aip.org
The influence of substrate orientation on homoepitaxial growth of beta-gallium oxide by
halide vapor phase epitaxy was investigated. Substrates were cut at various angles Δ b from
the (001) plane (Δ b= 0) to the (010) plane (Δ b= 90) of bulk crystals grown by the edge-
defined film-fed growth method. The growth rate increased with increasing absolute value of
Δ b near the (001). However, from the (001) to the (010), as Δ b increased, the growth rate
decreased sharply, and streaky grooves observed in the grown layer on the (001) substrate …
halide vapor phase epitaxy was investigated. Substrates were cut at various angles Δ b from
the (001) plane (Δ b= 0) to the (010) plane (Δ b= 90) of bulk crystals grown by the edge-
defined film-fed growth method. The growth rate increased with increasing absolute value of
Δ b near the (001). However, from the (001) to the (010), as Δ b increased, the growth rate
decreased sharply, and streaky grooves observed in the grown layer on the (001) substrate …
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