Enhancement-mode Ga2O3 MOSFETs with Si-ion-implanted source and drain
MH Wong, Y Nakata, A Kuramata… - Applied Physics …, 2017 - iopscience.iop.org
Enhancement-mode β-Ga 2 O 3 metal–oxide–semiconductor field-effect transistors with low
series resistance were achieved by Si-ion implantation doping of the source/drain contacts
and access regions. An unintentionally doped Ga 2 O 3 channel with low background carrier
concentration that was fully depleted at a gate bias of 0 V gave rise to a positive threshold
voltage without additional constraints on the channel dimensions or device architecture.
Transistors with a channel length of 4 µm delivered a maximum drain current density (I DS) …
series resistance were achieved by Si-ion implantation doping of the source/drain contacts
and access regions. An unintentionally doped Ga 2 O 3 channel with low background carrier
concentration that was fully depleted at a gate bias of 0 V gave rise to a positive threshold
voltage without additional constraints on the channel dimensions or device architecture.
Transistors with a channel length of 4 µm delivered a maximum drain current density (I DS) …
[CITATION][C] Enhancement-mode Ga2O3 MOSFETs with Si-Ion-Implanted Source and Drain
W ManHoi, N Yoshiaki, K Akito, Y Shigenobu… - … 学術講演会講演予稿集, 2017 - cir.nii.ac.jp
Enhancement-mode Ga<sub>2</sub>O<sub>3</sub> MOSFETs with Si-Ion-Implanted
Source and Drain | CiNii Research … Enhancement-mode Ga<sub>2</sub>O<sub>3</sub>
MOSFETs with Si-Ion-Implanted Source and Drain …
Source and Drain | CiNii Research … Enhancement-mode Ga<sub>2</sub>O<sub>3</sub>
MOSFETs with Si-Ion-Implanted Source and Drain …
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