Evaluation of crystallinity of lattice-matched Ge/GeSiSn heterostructure by Raman spectroscopy
T Tsukamoto, N Hirose, A Kasamatsu, T Matsui, Y Suda - Thin Solid Films, 2021 - Elsevier
Abstract Lattice-matched Ge/GeSiSn layers were formed on Ge substrates by sputter
epitaxy, and the effects of the thicknesses of the Ge and GeSiSn layers on crystallinity of the
Ge/GeSiSn layers were examined by Raman spectroscopy. First, a GeSiSn layer was
formed on a Ge substrate, and then a Ge layer was formed on it. Raman spectra were
obtained from the formed Ge/GeSiSn layers, and crystallinity was evaluated by using the full
width at half maximum (FWHM) values of the Raman peaks. The growth temperature was …
epitaxy, and the effects of the thicknesses of the Ge and GeSiSn layers on crystallinity of the
Ge/GeSiSn layers were examined by Raman spectroscopy. First, a GeSiSn layer was
formed on a Ge substrate, and then a Ge layer was formed on it. Raman spectra were
obtained from the formed Ge/GeSiSn layers, and crystallinity was evaluated by using the full
width at half maximum (FWHM) values of the Raman peaks. The growth temperature was …
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