Growth of InPBi on InP (311) B substrate by molecular beam epitaxy

K Akahane, A Matsumoto, T Umezawa… - … status solidi (a), 2022 - Wiley Online Library
K Akahane, A Matsumoto, T Umezawa, Y Tominaga, N Yamamoto
physica status solidi (a), 2022Wiley Online Library
The growth of InPBi by molecular beam epitaxy on an InP (311) B substrate is investigated.
Bi atoms are incorporated into the samples grown at or below 350° C. A Bi concentration of
up to 5% is estimated by X‐ray diffraction and secondary mass spectroscopy measurements.
Although the surface roughness increased with decreasing growth temperature and at a
high Bi flux, Bi atoms are found to have surfactant effects on the surface flatness of the
samples grown at a low Bi flux.
The growth of InPBi by molecular beam epitaxy on an InP(311)B substrate is investigated. Bi atoms are incorporated into the samples grown at or below 350 °C. A Bi concentration of up to 5% is estimated by X‐ray diffraction and secondary mass spectroscopy measurements. Although the surface roughness increased with decreasing growth temperature and at a high Bi flux, Bi atoms are found to have surfactant effects on the surface flatness of the samples grown at a low Bi flux.
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