Improved Electron Transport Properties of Ga1–xInxSb Quantum Well Channel Using Strained‐Al0.40In0.60Sb/Al1–yInySb Stepped Buffer
M Hiraoka, Y Endoh, K Osawa… - … status solidi (a), 2020 - Wiley Online Library
Unstrained Ga1–xInxSb quantum well (QW) channel using strained‐Al0. 40In0. 60Sb/Al1–
yInySb stepped buffer layer grown on GaAs (100) substrate is investigated. Ga1–xInxSb QW
is lattice‐matched to the Al1–yInySb lower buffer layer. Sheet electron density (Ns) of Ga1–
xInxSb QW is about twice that of InSb one. Electron mobility (μ) increases with increasing In
content x of Ga1–xInxSb. Unstrained Ga0. 22In0. 78Sb QW channel using strained‐Al0.
40In0. 60Sb/Al0. 25In0. 75Sb stepped buffer has Ns of 2.05× 1012 cm− 2 and μ of 15 500 …
yInySb stepped buffer layer grown on GaAs (100) substrate is investigated. Ga1–xInxSb QW
is lattice‐matched to the Al1–yInySb lower buffer layer. Sheet electron density (Ns) of Ga1–
xInxSb QW is about twice that of InSb one. Electron mobility (μ) increases with increasing In
content x of Ga1–xInxSb. Unstrained Ga0. 22In0. 78Sb QW channel using strained‐Al0.
40In0. 60Sb/Al0. 25In0. 75Sb stepped buffer has Ns of 2.05× 1012 cm− 2 and μ of 15 500 …
Improved Electron Transport Properties of Ga1–xInxSb Quantum Well Channel Using Strained‐Al0.40In0.60Sb/Al1–yInySb Stepped Buffer.
M Hiraoka, Y Endoh, K Osawa… - … Status Solidi. A …, 2020 - search.ebscohost.com
Unstrained Ga1–xInxSb quantum well (QW) channel using strained‐Al0. 40In0. 60Sb/Al1–
yInySb stepped buffer layer grown on GaAs (100) substrate is investigated. Ga1–xInxSb QW
is lattice‐matched to the Al1–yInySb lower buffer layer. Sheet electron density (Ns) of Ga1–
xInxSb QW is about twice that of InSb one. Electron mobility (μ) increases with increasing In
content x of Ga1–xInxSb. Unstrained Ga0. 22In0. 78Sb QW channel using strained‐Al0.
40In0. 60Sb/Al0. 25In0. 75Sb stepped buffer has Ns of 2.05× 1012 cm− 2 and μ of 15 500 …
yInySb stepped buffer layer grown on GaAs (100) substrate is investigated. Ga1–xInxSb QW
is lattice‐matched to the Al1–yInySb lower buffer layer. Sheet electron density (Ns) of Ga1–
xInxSb QW is about twice that of InSb one. Electron mobility (μ) increases with increasing In
content x of Ga1–xInxSb. Unstrained Ga0. 22In0. 78Sb QW channel using strained‐Al0.
40In0. 60Sb/Al0. 25In0. 75Sb stepped buffer has Ns of 2.05× 1012 cm− 2 and μ of 15 500 …
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