Investigation of the growth mechanism and crystallographic structures of GaSb dots nucleation layer and GaSb thin film grown on Si (001) substrate by molecular …
R Machida, R Toda, S Hara, I Watanabe… - Journal of Vacuum …, 2022 - pubs.aip.org
We investigated the growth mechanism and crystallographic structures of GaSb dots as a
nucleation layer and GaSb thin films grown on a Si (001) substrate by molecular beam
epitaxy using atomic force microscopy and transmission electron microscopy (TEM). The
surface morphology of the 100-nm-thick GaSb with GaSb dots drastically changed from that
without them. As the GaSb dots gradually grew in size, the coalescence between the
adjacent dots was repeated and the space between them was filled, thereby changing the …
nucleation layer and GaSb thin films grown on a Si (001) substrate by molecular beam
epitaxy using atomic force microscopy and transmission electron microscopy (TEM). The
surface morphology of the 100-nm-thick GaSb with GaSb dots drastically changed from that
without them. As the GaSb dots gradually grew in size, the coalescence between the
adjacent dots was repeated and the space between them was filled, thereby changing the …
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