Stability and degradation of isolation and surface in Ga2O3 devices

C De Santi, A Nardo, MH Wong, K Goto… - Microelectronics …, 2019 - Elsevier
Within this paper, we report the first study on the reliability of isolation structures and
surfaces for the gallium oxide material system. Even though insulation by Mg-doping
implantation and diffusion is found to provide a stable electrical isolation at increasing
temperature, a significant thermally-activated leakage flows through surface states. The
vertical bulk material does provide a better stability of the isolation over stress time, but
withstands a lower level of stress compared with the surface and the lateral structure …
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