Vertical Ga2O3 Schottky Barrier Diodes With Guard Ring Formed by Nitrogen-Ion Implantation
CH Lin, Y Yuda, MH Wong, M Sato… - IEEE Electron …, 2019 - ieeexplore.ieee.org
IEEE Electron Device Letters, 2019•ieeexplore.ieee.org
A guard ring (GR) was employed to improve the breakdown voltage (V br) of vertical Ga 2 O
3 Schottky barrier diodes (SBDs) with or without a field-plate (FP) by eliminating electric field
concentration at the edges of anode and FP electrodes. The GR structure was formed by
nitrogen (N)-ion implantation. Four types of vertical SBD structures with: 1) neither a GR nor
a FP; 2) a GR; 3) a FP; and 4) both a GR and a FP were fabricated on the same substrate.
The SBDs with a GR [structures 2) and 4)] showed larger V br values than their GR-free …
3 Schottky barrier diodes (SBDs) with or without a field-plate (FP) by eliminating electric field
concentration at the edges of anode and FP electrodes. The GR structure was formed by
nitrogen (N)-ion implantation. Four types of vertical SBD structures with: 1) neither a GR nor
a FP; 2) a GR; 3) a FP; and 4) both a GR and a FP were fabricated on the same substrate.
The SBDs with a GR [structures 2) and 4)] showed larger V br values than their GR-free …
A guard ring (GR) was employed to improve the breakdown voltage (V br ) of vertical Ga 2 O 3 Schottky barrier diodes (SBDs) with or without a field-plate (FP) by eliminating electric field concentration at the edges of anode and FP electrodes. The GR structure was formed by nitrogen (N)-ion implantation. Four types of vertical SBD structures with: 1) neither a GR nor a FP; 2) a GR; 3) a FP; and 4) both a GR and a FP were fabricated on the same substrate. The SBDs with a GR [structures 2) and 4)] showed larger V br values than their GR-free counterparts [structures 1) and 3)]. Considering the trade-off relationship between V br and specific on-resistance (R on ), a V br /R on combination of 1.43 kV/4.7 mΩ · cm 2 for the GR/FP-SBD corresponds to one of the best balanced data for Ga 2 O 3 SBDs.
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