Organic Mott insulator-based nanowire formed
by using the Nanoscale-electrocrystallization

Hiroyuki Hasegawa, Yutaka Noguchi, Rieko Ueda, Tohru Kubota, Shinro Mashiko

Abstract
We obtained organic Mott insulator nanowire by using the Nanoscale-electrocrystallization. The ac electrocrystallization provided nanowires only in the gap between two electrodes though dc yielded them over the anode surface. These nanowires ranged in width from 50 nm to several hundred nm and were several m in length. We also measured their i|V characteristics.

doi:10.1016/j.tsf.2007.04.057