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Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy Toru Kinoshita, Keiichiro Hironaka, Toshiyuki Obata, Toru Nagashima, Rafael Dalmau, Raoul Schlesser, Baxter Moody, Jinqiao Xie, Shin-ichiro Inoue, Yoshinao Kumagai, Akinori Koukitu, Zlatko Sitar AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) were fabricated on AlN substrates. The AlN substrates were prepared by growing thick hydride vapor phase epitaxy (HVPE)-AlN layers on bulk AlN substrates prepared by physical vapor transport (PVT). After growing an LED structure, the PVT-AlN substrates were removed by mechanical polishing. This process allowed the fabrication of DUV-LEDs on HVPE-AlN substrates with high crystalline quality and DUV optical transparency. The DUV-LEDs exhibited a single emission peaking at 268nm through the HVPE-AlN substrates. The output power as high as 28mW was obtained at an injection current of 250 mA. doi:10.1143/APEX.5.122101 |