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Fabrication of an ordered anodic aluminum oxide pore arrays with an interpore distance smaller than the nano-indentation pitch formed by ion beam etching Chonge Wang, Yasuharu Ishida, Ken-ichi Saitoh, Tomohiro Shimizu, We investigated a method for preparation of self-ordering nanopore arrays with the interpore distance of 60 nm by guided self-organization of anodic aluminum oxide (AAO) with a pre-patterned ordered array of indentations of Al film. An ordered triangular array of 100 nm-pitch indentations was formed on Al film by ion beam etching (IBE) with the EB resist mask, and then it was used as a guide for formation of AAO pore. We found it was possible to reduce an interpore distance of AAO to 1/√3 of the pitch of the indentation by the choice of appropriate IBE parameters and anodization voltage. doi:10.1109/IMFEDK.2012.6218612 |