Development and applications of electron beam ion source for nanoprocesses

M Sakurai, M.Tona, H.Watanabe, N.Nakamura, S.Ohtani, T.Terui, S.Mashiko, H.A.Sakaue

Abstract

An electron beam ion source (EBIS) was developed and applied to create nanostructures. The EBIS uses a commercial superconducting magnet (3T) with vacuum system independent from another vacuum system which comprises all of the ion source constituents except the magnet. The attained parameters of electron beam are emission current of 180mA and acceleration voltage of 20kV. The EBIS creates HCIs in nA region (e.g. 2nA for Ar12+). Higher charge states are suppressed by residual gases. The HCIs were irradiated to HOPG and the structure of irradiated surface was observed by STM, and the image indicates the fluence as much as 1013ion/cm2 is accessible with the present EBIS.


doi:10.1088/1742-6596/163/1/012115