ナノ光構造技術を駆使した深紫外LED ICTデバイスの高性能化への挑戦既存素子に対する深紫外LEDのインパクト深紫外LED、深紫外ICTが拓く安心・安全で持続可能な社会

Outline

catch.jpgThe DUV ICT Device Laboratory is advancing the research and development of unprecedented deep-ultraviolet (DUV) ICT devices such as environmentally-friendly, ultra-compact, highly-efficient, and low-cost DUV light sources and sensors opening the possibility of technological innovation for life- and socialinfrastructure in various fields ranging from ICT, purification of water and air, to medical applications. We are developing ultra-compact DUV solid light sources based on high-power and energy-efficient DUV light-emitting diodes (LEDs) by the development of nanophotonic light-extraction technology and the collaboration among industry, universities and government.

Topics

2015.4.21
Our achievements in the DUV-LEDs was introduced in the online magazine
"Semiconductor Today"
The article title: Increasing power and efficiency of 265nm-wavelength LEDs
2015.4.7
It was published in the newspaper "The Nikkei". "10 times stronger in deep-ultraviolet irradiation and highly efficient sterilization LED, NICT"
2015.4.7
It was published in the newspaper "Nikkei Sangyo Shimbun". "LED sterilization improvement and 9 times increasing power in deep-ultraviolet region, NICT"
2015.4.3
It was published in the newspaper "FujiSankei Business i". "Favorable impression on the successful development of deep-ultraviolet LED."
2015.4.2
The achievement in deep-ultraviolet LED was reported in TV Tokyo News channel (M plus 11).
2015.4.2
It was published in the newspaper "Nikkan Kogyo Shimbun". "Maximum output power exceeds 90 mW, development of smart deep-ultraviolet LEDs by NICT"
2015.4.1
It was published in the online magazine "Nikkei Technology Online". "High output power deep-ultraviolet LED and an alternative to replace the mercury lamp for sterilization"
2015.4.1
Press Release "Successful development of the deep-ultraviolet LEDs with world's highest output power (over 90mW) "
2015.12.15
We opened our website.

Archive

Contact Information:

Shin-ichiro Inoue, Ph.D.
Director of DUV ICT Device Laboratory

588-2 Iwaoka, Nishi-ku, Kobe 651-2492 Japan
Advanced ICT Research Institute, NICT
E-mail: s_inoue@nict.go.jp