Sandeep Kumar

研究業績リスト（2020年12月31日更新）

List of Publications (updated 2019/12/26)


　学術論文 Journals　
　国際会議一般講演 Contributed International Conference Presentations　
　国内会議・研究会一般講演 Contributed Japanese Domestic Conference Presentations


学術論文
Journals


2022
  • S. Kumar, H. Murakami, Y. Kumagai, and M. Higashiwaki, "Vertical β-Ga2O3 Schottky barrier diodes with trench staircase field plate," Appl. Phys. Express vol. 15, pp. 054001 (2022).
2020
  • S. Kumar, T. Kamimura, C.-H. Lin, Y. Nakata, and M. Higashiwaki, "Reduction in leakage current through interface between Ga2O3 epitaxial layer and substrate by ion implantation doping of compensating impurities," Appl. Phys. Lett. vol. 117, pp. 193502 (2020).
2019
  • S. Kumar, R. Soman, A. S. Pratiyush, R. Muralidharan, and D. N. Nath. "A Performance Comparison Between β-Ga2O3 and GaN HEMTs." IEEE Transactions on Electron Devices 66, no. 8 (2019): 3310-3317.
  • A. S. Pratiyush, U. U. Muazzam, S. Kumar, P. Vijayakumar, S. Ganesamoorthy, N. Subramanian, R. Muralidharan, and D. N. Nath. "Optical Float-Zone Grown Bulk β-Ga2O3-Based Linear MSM Array of UV-C Photodetectors." IEEE Photonics Technology Letters 31, no. 12 (2019): 923-926.
  • S. Kumar, H. Kumar, S. Vura, A. S. Pratiyush, V. S. Charan, S. B. Dolmanan, S. Tripathy, R. Muralidharan, and D. N. Nath. "Investigation of Ta2O5 as an Alternative High-k Dielectric for InAlN/GaN MOS-HEMT on Si." IEEE Transactions on Electron Devices 66, no. 3 (2019): 1230-1235.
  • S. Kumar, A. S. Pratiyush, S. B. Dolmanan, H. R. Tan, S. Tripathy, R. Muralidharan, and D. N. Nath. "Optically Coupled Electrically Isolated, Monolithically Integrated Switch Using AlxGa1–xN/GaN High Electron Mobility Transistor Structures on Si (111)." ACS Applied Electronic Materials 1, no. 3 (2019): 340-345.
2018
  • N. Remesh, N. Mohan, S. Kumar, S. Prabhu, I. Guiney, C. J. Humphreys, S. Raghavan, R. Muralidharan, and D. N. Nath. "Vertical Current Transport in AlGaN/GaN HEMTs on Silicon: Experimental Investigation and Analytical Model." IEEE Transactions on Electron Devices 66, no. 1 (2018): 613-618.
  • A. S. Pratiyush, Z. Xia, S. Kumar, Y. Zhang, C. Joishi, R. Muralidharan, S. Rajan, and D. N. Nath. "MBE-Grown β-Ga2O3-Based Schottky UV-C Photodetectors With Rectification Ratio ~107." IEEE Photonics Technology Letters 30, no. 23 (2018): 2025-2028.
  • H. Chandrasekar, S. Kumar, K. L. Ganapathi, S. Prabhu, S. B. Dolmanan, S. Tripathy, S. Raghavan, K. N. Bhat, S. Mohan, R. Muralidharan, and N. Bhat. "Dielectric Engineering of HfO2 Gate-Stacks for Normally-ON GaN HEMTs on 200-mm Silicon Substrates." IEEE Transactions on Electron Devices 65, no. 9 (2018): 3711-3718.
  • A. S. Pratiyush, S. Krishnamoorthy, S. Kumar, Z. Xia, R. Muralidharan, S. Rajan, and D. N. Nath. "Demonstration of zero bias responsivity in MBE grown β-Ga2O3 lateral deep-UV photodetector." Japanese Journal of Applied Physics 57, no. 6 (2018): 060313.
2017
  • S. Kumar, A. S. Pratiyush, S. B. Dolmanan, S. Tripathy, R. Muralidharan, and D. N. Nath. "UV detector based on InAlN/GaN-on-Si HEMT stack with photo-to-dark current ratio >107." Applied Physics Letters 111, no. 25 (2017): 251103.
  • S. Kumar, P. Gupta, I. Guiney, C. J. Humphreys, S. Raghavan, R. Muralidharan, and D. N. Nath. "Temperature and bias dependent trap capture cross section in AlGaN/GaN HEMT on 6-in silicon with carbon-doped buffer." IEEE Transactions on Electron Devices 64, no. 12 (2017): 4868-4874.
  • S. Kumar, N. Remesh, S. B. Dolmanan, S. Tripathy, S. Raghavan, R. Muralidharan, and D. N. Nath. "Interface traps at Al2O3/InAlN/GaN MOS-HEMT-on-200 mm Si." Solid-State Electronics 137 (2017): 117-122.


国際会議一般講演
Contributed International Conference Presentations


2019
  • (Oral) S. Kumar, S. Vura, V. S. Charan, S. B. Dolmanan, S. Tripathy, R. Muralidharan, D. N. Nath, “Normally-Off AlGaN/GaN HEMT on 200 mm Silicon with ON-Current 500 mA/mm and Vth>5V”, Electronic Materials Conferences (EMC), 2019
  • (Poster) S. Kumar, A. S. Pratiyush, R. Muralidharan, and D. N. Nath,“β-Ga2O3 Versus GaN HEMTs—A Closer Look”, International Conference on Nitride Semiconductors (ICNS), 2019
  • (Poster) S. Kumar, S. Vura, V. S. Charan, S. B. Dolmanan, S. Tripathy, R. Muralidharan, D. N. Nath, “Normally-Off AlGaN/GaN HEMT on 200 mm Silicon with ON-Current 500 mA/mm and Vth>5V”, International Conference on Nitride Semiconductors (ICNS), 2019
2018
  • (Oral) S. Kumar, S. Vura, V. S. Charan, S. B. Dolmanan, S. Tripathy, R. Muralidharan, D. N. Nath, “Normally-Off AlGaN/GaN HEMT on 200 mm Silicon with ON-Current 500 mA/mm and Vth>5V”, IEEE-International Conference on Emerging Electronics (ICEE), 2018.
  • (Oral) S. Kumar, H. Kumar, S. Vura, A. S. Pratiyush, V. S. Charan, S. B. Dolmanan, S. Tripathy, R. Muralidharan, and D. N. Nath, “Investigation of Ta2O5 as a promising high k dielectric for InAlN/GaN-on-Si HEMT”, International Workshop on Nitride Semiconductors (IWN), 2018.
  • (Poster) S. Kumar, A. S. Pratiyush, S. B. Dolmanan, and S. Tripathy, R. Muralidharan, and D. N. Nath, “UV-A detector based on gate-recessed InAlN/GaN-on-silicon HEMT stack”, International Workshop on Nitride Semiconductors (IWN), 2018.
  • (Poster) S. Kumar, A. S. Pratiyush, R. Muralidharan, and D. N. Nath, “Performance comparison of β-Ga2O3 and GaN HEMTs”, International Workshop on Nitride Semiconductors (IWN), 2018
  • (Poster, late news) S. Kumar, S. Vura, V. S. Charan, S. B. Dolmanan, S. Tripathy, R. Muralidharan, D. N. Nath, “Normally-Off AlGaN/GaN HEMT on 200 mm Silicon with ON-Current 500 mA/mm and Vth>5V”, International Workshop on Nitride Semiconductors (IWN), 2018.
  • (Oral) S. Kumar, H. Kumar, S. Vura, A. S. Pratiyush, V. S. Charan, S. B. Dolmanan, S. Tripathy, R. Muralidharan, and D. N. Nath, “Investigation of Ta2O5 as a promising high k dielectric for InAlN/GaN-on-Si HEMT”, Lester Eastman Conference/US ​Workshop on Gallium Oxide(LEC/GOX), 2018
2017
  • (Oral) S. Kumar, P. Gupta, I. Guiney, C. J. Humphreys, S. Raghavan, R. Muralidharan, and D. N. Nath,”Capture cross-section estimation of traps in AlGaN/GaN HEMT on Silicon”, International Workshop on Physics of Semiconductor Devices (IWPSD), 2017
  • (Poster) S. Kumar, N. Remesh, S. B. Dolmanan, S. Tripathy, S. Raghavan, R. Muralidharan, and D. N. Nath”, Investigation of Al2O3/InAlN/GaN-on-Si HEMT by Capacitance Dispersion Technique, International Conference on Nitride Semiconductors (ICNS), 2017.
  • (Poster) S. Kumar, A. S. Pratiyush, S. B. Dolmanan, and S. Tripathy, R. Muralidharan, and D. N. Nath, “Optically switched gate-less normally-off III-nitride HEMT”, International Conference on Nitride Semiconductors (ICNS), 2017.
  • (Poster) S. Kumar, P. Gupta, I. Guiney, C. J. Humphreys, S. Raghavan, R. Muralidharan, and D. N. Nath, “Temperature dependent capacitance-voltage spectroscopy of AlGaN/GaN HEMT-on-Si with a C-doped buffer”, International Conference on Nitride Semiconductors (ICNS), 2017.
  • (Oral) S. Kumar, N. Remesh, S. B. Dolmanan, S. Tripathy, S. Raghavan, R. Muralidharan, and D. N. Nath, “Interface traps at Al2O3/InAlN/GaN HEMT-on-200 mm Si”, International Conference on Materials for Advanced Technologies (ICMAT), 2017.


国内会議・研究会一般講演
Contributed Japanese Domestic Conference Presentations


2021
  • Sandeep Kumar, Takafumi Kamimura, Chia-Hung Lin, Yoshiaki Nakata, and Masataka Higashiwak："Reduction of leakage current through interface between Ga2O3 epitaxial layer and substrate by Mg/ Fe implantation"、第81回応用物理学会秋季学術講演会、オンライン (Zoom)、2020年9月8-11日.