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  1. @ , LV@ , @ , ujIuɂTu~gM̊Jv dqʐMwa_b, Vol.J87-C,No.7,pp.549-556,2004

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  2.  H. Abe, M. Naito, W. -J. Moon, K. Kaneko, A. Saito, Z. Wang, gInterface structures of AlN/MgB2 thin films sputtered on sapphire c-and r-planeh, J. Appl. Phy. ,Vol.96, No.4, pp.2343- 2346, 2004

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  3.  H.Shimakage, A.Saito, A.Kawakami, Z.Wang, gFabrication condition dependence of as-grown MgB2 thin films by co-evaporation methodh, Physica C, Vol.408-410, pp.891-893, 2004

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  4. P. Vasek, H. Shimakage, Z. Wang, gTransverse voltage in zero external magnetic fields, its scaling and violation of the time-reversal symmetry in MgB2h, Physica C, Vol.411, pp.164-169, 2004

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  5. A. Saito, H. Shimakage, A. Kawakami, Z. Wang, S. Kuroda, H. Abe, M. Naito, W. J. Moon, K. Kaneko, M .Mukaida, S. Ohshima, gXRD and TEM studies of as-grown MgB2 thin films deposited on r-and c-plane sapphire substratesh, Physica C, Vol.412-414, pp.1366-1370 , 2004

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  6. S. Miki, K. Takahashi, D. Fujiwara, H. Shimakage, K. Sato, T. Yotsuya, K. Moriwaki, H. Fukuda, A. Saito, Z. Wang, T. Ishida, gSuperconducting dc characteristics of meander lines made by 10B enriched MgB2 thin filmsh, Physica C, Vol.412-414, pp.1387-1390, 2004

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  7.  A. Kawakami, Y. Uzawa, Z. Wang, gFrequency dependence of penetration depth for epitaxial NbN thin films at 0.1-1.1 THzh, Physica C, Vol.412-414, pp.1455-1458, 2004

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  8. H. Ishida, A. Kawakami, Z. Wang, K. Hamasaki, gRelationship between 1/f noise parameter and Andreev reflection probability of epitaxial NbN/AlN or MgO/NbN tunnel junctions, Physica C, Vol.412-414, pp.1459-1462, 2004

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  9.  K. Okanoue, H. Ishida, K. Hamasaki, A. Kawakami, Z. Wang, gPhoton-assisted multiple-Abdreev reflections in high-Jc NbN/AlN/NbN tunnel junctionsh, Physica C, Vol.412-414, pp.1463-1467, 2004

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  10.  K. Takahasi, S. Miki, K. Satoh, K. Moriwaki, K. Fukuda, T. Yotsuya, H. Shimakage, Z. Wang, S. Okayasu, M. Katagiri, Y. Morii, K. Hojou, N. Niimura, T. shida, gNeutron detector by using a metallic high-Tc Superconductor MgB2h, Physica C, Vol.412-414, pp.1597-1601, 2004

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  11. A. Saito, H. Shimakage, A. Kawakami, Z. Wang, M. Mukaida, S. Ohsima, gPreparation and properties of MgB2/AlN/MgB2 multi-layers for Josephson tunnel junctionsh, Transactions of the Materials Research Society of Japan, Vol.29, pp.1327-1330, 2004

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  12. H. Shimakage, K. Tsujimoto, Z. Wang, M. Tonouti, gCharacteristics of MgB2/AlN/NbN Josephson junctions with optimized conditionsh, Supercond. Sci. Technol.,Vol.17, pp.1376-1380, 2004

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  13. Γc a , @ , lJ@C , c F , un`MgB2̃GNgjNXp|glڍƔMɘa^pXfqւ̓WJɌā|v, ‘̕, Vol.40 , No.1, pp51-67, 2005

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  14. H. Shimakage, K. Tsujimoto, Z. Wang, gAll-MgB2 tunnel junctions with aluminum nitride barriersh, Appl.Phys.Lett.,Vol.86, 072512, 2005

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  15. Y. Uzawa, M. Takeda, A. Kawakami, Z. Wang, S. Noguchi, "Design consideration for a two-distributed-junction tuning circuit", International of Infrared and Millimeter Waves, Vol.26, pp.41-54, 2005

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  16. .Y. Kameda, S. Yorozu, Y. Hashimoto, H. Terai, A. Fujimaki, N. Yoshikawa, "High-speed demonstration of single-flux-quantum cross-bar switch up to 50 GHz", IEEE Trans. Appl. Supercond., Vol.15, pp.6-10,2005
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